Informaçao sobre o Autor
Zdoroveishev, A. V.
| Edição | Seção | Título | Arquivo |
| Volume 50, Nº 1 (2016) | XIX Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 10–14, 2015 | Effect of the dopant concentration on the luminescence properties of InGaAs/GaAs spin light-emitting diodes with a mn δ layer | |
| Volume 53, Nº 9 (2019) | Xxiii International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 11–14, 2019 | Enhanced Photoluminescence of Heavily Doped n-Ge/Si(001) Layers |