Structural and Morphological Properties of Hybrid Heterostructures Based on GaN Grown on a Compliant por-Si(111) Substrate
- Autores: Seredin P.1,2, Goloshchapov D.1, Zolotukhin D.1, Lenshin A.1, Mizerov A.3, Arsentyev I.4, Leiste H.5, Rinke M.5
-
Afiliações:
- Voronezh State University
- Ural Federal University named after the First President of Russia B.N. Yeltsin
- St. Petersburg National Research Academic University, Russian Academy of Sciences
- Ioffe Institute
- Karlsruhe Nano Micro Facility
- Edição: Volume 53, Nº 8 (2019)
- Páginas: 1120-1130
- Seção: Fabrication, Treatment, and Testing of Materials and Structures
- URL: https://journals.rcsi.science/1063-7826/article/view/206678
- DOI: https://doi.org/10.1134/S1063782619080165
- ID: 206678
Citar
Resumo
The possibility of synthesizing integrated GaN/por-Si heterostructures by plasma-assisted molecular beam epitaxy without an A1N/Si buffer layer is demonstrated. The beneficial effect of the high-temperature nitridation of a silicon substrate before GaN growth on the crystal quality of the GaN/Si layers is shown. It is established that, to obtain two-dimensional GaN layers on Si(111), it is reasonable to use compliant por-Si substrates and low-temperature GaN seed layers with a 3D morphology synthesized by plasma-assisted molecular beam epitaxy at relatively low substrate temperatures under stoichiometric conditions and upon enrichment with nitrogen. In this case, a self-assembled array of GaN seed nanocolumns with a fairly uniform diameter distribution forms on the por-Si substrate surface. The basic GaN layers, in turn, should be grown at a high temperature under stoichiometric conditions upon enrichment with gallium, upon which the coalescence of nucleated GaN nanocolumns and growth of a continuous two-dimensional GaN layer are observed. The use of compliant Si substrates is a relevant approach for forming GaN-based semiconductor device heterostructures by plasma-assisted molecular beam epitaxy.
Palavras-chave
Sobre autores
P. Seredin
Voronezh State University; Ural Federal University named after the First President of Russia B.N. Yeltsin
Autor responsável pela correspondência
Email: paul@phys.vsu.ru
Rússia, Voronezh, 394006; Yekaterinburg, 620002
D. Goloshchapov
Voronezh State University
Email: arsentyev@mail.ioffe.ru
Rússia, Voronezh, 394006
D. Zolotukhin
Voronezh State University
Email: arsentyev@mail.ioffe.ru
Rússia, Voronezh, 394006
A. Lenshin
Voronezh State University
Email: arsentyev@mail.ioffe.ru
Rússia, Voronezh, 394006
A. Mizerov
St. Petersburg National Research Academic University, Russian Academy of Sciences
Autor responsável pela correspondência
Email: andreymizerov@rambler.ru
Rússia, St. Petersburg, 194021
I. Arsentyev
Ioffe Institute
Autor responsável pela correspondência
Email: arsentyev@mail.ioffe.ru
Rússia, St. Petersburg, 194021
Harald Leiste
Karlsruhe Nano Micro Facility
Email: arsentyev@mail.ioffe.ru
Alemanha, H.-von-Helmholtz-Platz 1, Eggenstein-Leopoldshafen, 76344
Monika Rinke
Karlsruhe Nano Micro Facility
Email: arsentyev@mail.ioffe.ru
Alemanha, H.-von-Helmholtz-Platz 1, Eggenstein-Leopoldshafen, 76344