Specific Features of Carrier Transport in n+–n0–n+ Structures with a GaAs/AlGaAs Heterojunction at Ultrahigh Current Densities
- Autores: Slipchenko S.1, Podoskin A.1, Soboleva O.1, Yuferev V.1, Golovin V.1, Gavrina P.1, Romanovich D.1, Miroshnikov I.1, Pikhtin N.1
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Afiliações:
- Ioffe Institute
- Edição: Volume 53, Nº 6 (2019)
- Páginas: 806-813
- Seção: Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena
- URL: https://journals.rcsi.science/1063-7826/article/view/206348
- DOI: https://doi.org/10.1134/S1063782619060241
- ID: 206348
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Resumo
The current–voltage characteristics of n+-GaAs/n0-GaAs/N0-AlGaAs/N+-AlGaAs/n+-GaAs isotype heterostructures and n+-GaAs/n0-GaAs/n+-GaAs homostructures are studied. It is shown that, for a heterostructure under reverse bias providing the injection of electrons from n0-GaAs into N0-AlGaAs, the maximum operating voltage reaches a value of 48 V at a thickness of the N0-AlGaAs layer of 1.0 μm, and the current–voltage characteristic has no region of negative differential resistance. The operation of a homostructure is accompanied by a transition to the negative-differential-resistance region at a voltage of 10 V. Theoretical analysis in terms of the energy-balance model demonstrated that the reverse-biased isotype heterostructure has no negative-differential-resistance region because, in this case, the field domain does not collapse in contrast to what occurs in homostructures.
Sobre autores
S. Slipchenko
Ioffe Institute
Autor responsável pela correspondência
Email: SergHPL@mail.ioffe.ru
Rússia, St. Petersburg, 194021
A. Podoskin
Ioffe Institute
Email: SergHPL@mail.ioffe.ru
Rússia, St. Petersburg, 194021
O. Soboleva
Ioffe Institute
Email: SergHPL@mail.ioffe.ru
Rússia, St. Petersburg, 194021
V. Yuferev
Ioffe Institute
Email: SergHPL@mail.ioffe.ru
Rússia, St. Petersburg, 194021
V. Golovin
Ioffe Institute
Email: SergHPL@mail.ioffe.ru
Rússia, St. Petersburg, 194021
P. Gavrina
Ioffe Institute
Email: SergHPL@mail.ioffe.ru
Rússia, St. Petersburg, 194021
D. Romanovich
Ioffe Institute
Email: SergHPL@mail.ioffe.ru
Rússia, St. Petersburg, 194021
I. Miroshnikov
Ioffe Institute
Email: SergHPL@mail.ioffe.ru
Rússia, St. Petersburg, 194021
N. Pikhtin
Ioffe Institute
Email: SergHPL@mail.ioffe.ru
Rússia, St. Petersburg, 194021