Electrical Properties of Indium-Oxide Thin Films Produced by Plasma-Enhanced Reactive Thermal Evaporation
- Autores: Ilin A.1, Matsukatova A.1, Forsh P.1,2,3, Vygranenko Y.4
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Afiliações:
- Faculty of Physics, Moscow State University
- National Research Centre “Kurchatov Institute”
- Moscow Institute of Physics and Technology, Department of Nano-, Bio-, Information, and Cognitive Technologies
- CTS-UNINOVA, Quinta da Torre
- Edição: Volume 52, Nº 12 (2018)
- Páginas: 1638-1641
- Seção: Fabrication, Treatment, and Testing of Materials and Structures
- URL: https://journals.rcsi.science/1063-7826/article/view/204829
- DOI: https://doi.org/10.1134/S1063782618120114
- ID: 204829
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Resumo
The structure and electrical properties of transparent indium-oxide thin films produced by plasma-enhanced reactive thermal evaporation at different substrate temperatures are studied. It is found that the films have a grained structure. An increase in the substrate temperature yields a considerable increase in the conductivity of the films and a decrease in the photoconductivity-relaxation time. An interpretation of the effect of the substrate temperature on the observed changes in the electrical and photoelectric properties of the indium-oxide films under study is proposed.
Sobre autores
A. Ilin
Faculty of Physics, Moscow State University
Autor responsável pela correspondência
Email: as.ilin@physics.msu.ru
Rússia, Moscow, 119991
A. Matsukatova
Faculty of Physics, Moscow State University
Email: as.ilin@physics.msu.ru
Rússia, Moscow, 119991
P. Forsh
Faculty of Physics, Moscow State University; National Research Centre “Kurchatov Institute”; Moscow Institute of Physics and Technology, Department of Nano-, Bio-, Information, and Cognitive Technologies
Email: as.ilin@physics.msu.ru
Rússia, Moscow, 119991; Moscow, 123182; Dolgoprudnyi, Moscow region, 141700
Yu. Vygranenko
CTS-UNINOVA, Quinta da Torre
Email: as.ilin@physics.msu.ru
Portugal, Caparica, 2829-516