Comparison of the Features of Electron Transport and Subterahertz Generation in Diodes Based on 6-, 18-, 70-, and 120-Period GaAs/AlAs Superlattices
- Авторлар: Obolenskaya E.1, Ivanov A.1, Pavelyev D.1, Kozlov V.1,2, Vasilev A.3,4
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Мекемелер:
- Lobachevsky State University of Nizhny Novgorod
- Institute for Physics of Microstructures, Russian Academy of Sciences
- Research and Engineering Center for Submicron Heterostructures for Microelectronics
- Ioffe Institute
- Шығарылым: Том 53, № 9 (2019)
- Беттер: 1192-1197
- Бөлім: Xxiii International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 11–14, 2019
- URL: https://journals.rcsi.science/1063-7826/article/view/206763
- DOI: https://doi.org/10.1134/S1063782619090124
- ID: 206763
Дәйексөз келтіру
Аннотация
A comparison of the features of electron transport in diodes based on 6-, 18-, 30-, 70-, and 120-period GaAs/AlAs superlattices with a similar design is performed. However, the number of periods and diode areas are different. The values of the parasitic resistances of the near-contact diode regions are correlated, and the specific voltage drop across one superlattice period is determined for all special points in the current–voltage characteristics of the diodes. The mechanism of the appearance of stable current oscillations in diodes based on 6-, 18-, 30-, 70-, and 120-period GaAs/AlAs superlattices with a high doping level is investigated.
Негізгі сөздер
Авторлар туралы
E. Obolenskaya
Lobachevsky State University of Nizhny Novgorod
Хат алмасуға жауапты Автор.
Email: bess009@mail.ru
Ресей, Nizhny Novgorod, 603950
A. Ivanov
Lobachevsky State University of Nizhny Novgorod
Email: bess009@mail.ru
Ресей, Nizhny Novgorod, 603950
D. Pavelyev
Lobachevsky State University of Nizhny Novgorod
Email: bess009@mail.ru
Ресей, Nizhny Novgorod, 603950
V. Kozlov
Lobachevsky State University of Nizhny Novgorod; Institute for Physics of Microstructures, Russian Academy of Sciences
Email: bess009@mail.ru
Ресей, Nizhny Novgorod, 603950; Nizhny Novgorod, 603087
A. Vasilev
Research and Engineering Center for Submicron Heterostructures for Microelectronics; Ioffe Institute
Email: bess009@mail.ru
Ресей, St. Petersburg, 194021; St. Petersburg, 194021