MOS-Hydride Epitaxy Growth of InGaAs/GaAs Submonolayer Quantum Dots for the Excitation of Surface Plasmon–Polaritons
- Авторлар: Baidus N.1, Kukushkin V.2,3, Nekorkin S.1, Kruglov A.1,3, Reunov D.3
-
Мекемелер:
- Research Physical-Technical Institute, Lobachevsky State University of Nizhny Novgorod
- Institute of Applied Physics, Russian Academy of Sciences
- Lobachevsky State University of Nizhny Novgorod
- Шығарылым: Том 53, № 3 (2019)
- Беттер: 326-331
- Бөлім: Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena
- URL: https://journals.rcsi.science/1063-7826/article/view/205840
- DOI: https://doi.org/10.1134/S1063782619030047
- ID: 205840
Дәйексөз келтіру
Аннотация
The properties of InGaAs/GaAs quantum dots (QDs) grown by MOS-hydride migration-stimulated epitaxy at a reduced pressure using submonolayer deposition are investigated. The wavelength of their photoluminescence at 300 K is in the range of 1.28–1.31 μm and can be controlled by varying the growth temperature and the number of QD-deposition cycles. The highest QD surface density is 3 × 1010 cm–2. Structures with 1–3 QD layers and spacer layers 5–12 nm thick between them are grown. The spacer layers (as well as the cap layers) are selectively doped with carbon (acceptor). It is established that the QD photoluminescence is characterized by an enhanced degree of polarization in the direction orthogonal to the structure plane. This should favor their use for the excitation of surface plasmon–polaritons in Schottky light-emitting diodes.
Авторлар туралы
N. Baidus
Research Physical-Technical Institute, Lobachevsky State University of Nizhny Novgorod
Email: vakuk@appl.sci-nnov.ru
Ресей, Nizhny Novgorod, 603950
V. Kukushkin
Institute of Applied Physics, Russian Academy of Sciences; Lobachevsky State University of Nizhny Novgorod
Хат алмасуға жауапты Автор.
Email: vakuk@appl.sci-nnov.ru
Ресей, Nizhny Novgorod, 603950; Nizhny Novgorod, 603950
S. Nekorkin
Research Physical-Technical Institute, Lobachevsky State University of Nizhny Novgorod
Email: vakuk@appl.sci-nnov.ru
Ресей, Nizhny Novgorod, 603950
A. Kruglov
Research Physical-Technical Institute, Lobachevsky State University of Nizhny Novgorod; Lobachevsky State University of Nizhny Novgorod
Email: vakuk@appl.sci-nnov.ru
Ресей, Nizhny Novgorod, 603950; Nizhny Novgorod, 603950
D. Reunov
Lobachevsky State University of Nizhny Novgorod
Email: vakuk@appl.sci-nnov.ru
Ресей, Nizhny Novgorod, 603950