Ellipsometric Method for Measuring the CdTe Buffer-Layer Temperature in the Molecular-Beam Epitaxy of CdHgTe
- Авторлар: Shvets V.1,2, Azarov I.1,2, Marin D.1, Yakushev M.1, Rykhlitsky S.1
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Мекемелер:
- Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
- Novosibirsk State University
- Шығарылым: Том 53, № 1 (2019)
- Беттер: 132-137
- Бөлім: Fabrication, Treatment, and Testing of Materials and Structures
- URL: https://journals.rcsi.science/1063-7826/article/view/205646
- DOI: https://doi.org/10.1134/S1063782619010196
- ID: 205646
Дәйексөз келтіру
Аннотация
An ellipsometric procedure developed for noncontact in situ measurement of the CdTe buffer-layer temperature is presented. The procedure is based on the temperature dependence of the energy position of CdTe critical points and is intended for determining the initial temperature of the growth surface before epitaxy of the cadmium–mercury–telluride compound. An express method for determining the position of critical points by the spectra of ellipsometric parameter Ψ is proposed. A series of calibrated experiments is performed. They result in determination of the temperature dependences of the position of critical points. Estimations and the experiment show that the temperature-measurement accuracy is ±3°C.
Авторлар туралы
V. Shvets
Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences; Novosibirsk State University
Хат алмасуға жауапты Автор.
Email: shvets@isp.nsc.ru
Ресей, Novosibirsk, 630090; Novosibirsk, 630090
I. Azarov
Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences; Novosibirsk State University
Email: shvets@isp.nsc.ru
Ресей, Novosibirsk, 630090; Novosibirsk, 630090
D. Marin
Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
Email: shvets@isp.nsc.ru
Ресей, Novosibirsk, 630090
M. Yakushev
Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
Email: shvets@isp.nsc.ru
Ресей, Novosibirsk, 630090
S. Rykhlitsky
Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
Email: shvets@isp.nsc.ru
Ресей, Novosibirsk, 630090