Specific Features of the Electrochemical Capacitance–Voltage Profiling of GaAs LED and pHEMT Structures with Quantum-Confined Regions
- Авторлар: Yakovlev G.1, Dorokhin M.2, Zubkov V.1, Dudin A.3, Zdoroveyshchev A.2, Malysheva E.2, Danilov Y.2, Zvonkov B.2, Kudrin A.2
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Мекемелер:
- St. Petersburg State Electrotechnical University “LETI”
- Physical–Technical Research Institute
- Svetlana-Rost JSC
- Шығарылым: Том 52, № 8 (2018)
- Беттер: 1004-1011
- Бөлім: Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena
- URL: https://journals.rcsi.science/1063-7826/article/view/203824
- DOI: https://doi.org/10.1134/S1063782618080250
- ID: 203824
Дәйексөз келтіру
Аннотация
GaAs light-emitting (LED) and HEMT structures with δ-doped regions, InGaAs/GaAs quantum wells, and surface layers of InAs/GaAs quantum dots were studied by means of the electrochemical capacitance- voltage profiling technique. The concentration depth profiles of free charge carriers were obtained. Charges accumulated in quantum wells and quantum dots, as well as the doping levels of the emitter and δ layers were determined. The band structure and free carrier density distribution over the depth of the samples with different quantum well geometry were simulated. The specific features of electrochemical capacitance- voltage profiling in different heterostructure types are analyzed. A method of integration of capacitance- voltage curves at each etching stage was suggested. This method provides the efficient separation of responses from closely located layers, particularly the quantum well and δ layer.
Авторлар туралы
G. Yakovlev
St. Petersburg State Electrotechnical University “LETI”
Хат алмасуға жауапты Автор.
Email: geyakovlev@etu.ru
Ресей, St. Petersburg, 197376
M. Dorokhin
Physical–Technical Research Institute
Email: geyakovlev@etu.ru
Ресей, Nizhny Novgorod, 603950
V. Zubkov
St. Petersburg State Electrotechnical University “LETI”
Email: geyakovlev@etu.ru
Ресей, St. Petersburg, 197376
A. Dudin
Svetlana-Rost JSC
Email: geyakovlev@etu.ru
Ресей, St. Petersburg, 194156
A. Zdoroveyshchev
Physical–Technical Research Institute
Email: geyakovlev@etu.ru
Ресей, Nizhny Novgorod, 603950
E. Malysheva
Physical–Technical Research Institute
Email: geyakovlev@etu.ru
Ресей, Nizhny Novgorod, 603950
Yu. Danilov
Physical–Technical Research Institute
Email: geyakovlev@etu.ru
Ресей, Nizhny Novgorod, 603950
B. Zvonkov
Physical–Technical Research Institute
Email: geyakovlev@etu.ru
Ресей, Nizhny Novgorod, 603950
A. Kudrin
Physical–Technical Research Institute
Email: geyakovlev@etu.ru
Ресей, Nizhny Novgorod, 603950