Specific Features of the Electrochemical Capacitance–Voltage Profiling of GaAs LED and pHEMT Structures with Quantum-Confined Regions


Дәйексөз келтіру

Толық мәтін

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Аннотация

GaAs light-emitting (LED) and HEMT structures with δ-doped regions, InGaAs/GaAs quantum wells, and surface layers of InAs/GaAs quantum dots were studied by means of the electrochemical capacitance- voltage profiling technique. The concentration depth profiles of free charge carriers were obtained. Charges accumulated in quantum wells and quantum dots, as well as the doping levels of the emitter and δ layers were determined. The band structure and free carrier density distribution over the depth of the samples with different quantum well geometry were simulated. The specific features of electrochemical capacitance- voltage profiling in different heterostructure types are analyzed. A method of integration of capacitance- voltage curves at each etching stage was suggested. This method provides the efficient separation of responses from closely located layers, particularly the quantum well and δ layer.

Авторлар туралы

G. Yakovlev

St. Petersburg State Electrotechnical University “LETI”

Хат алмасуға жауапты Автор.
Email: geyakovlev@etu.ru
Ресей, St. Petersburg, 197376

M. Dorokhin

Physical–Technical Research Institute

Email: geyakovlev@etu.ru
Ресей, Nizhny Novgorod, 603950

V. Zubkov

St. Petersburg State Electrotechnical University “LETI”

Email: geyakovlev@etu.ru
Ресей, St. Petersburg, 197376

A. Dudin

Svetlana-Rost JSC

Email: geyakovlev@etu.ru
Ресей, St. Petersburg, 194156

A. Zdoroveyshchev

Physical–Technical Research Institute

Email: geyakovlev@etu.ru
Ресей, Nizhny Novgorod, 603950

E. Malysheva

Physical–Technical Research Institute

Email: geyakovlev@etu.ru
Ресей, Nizhny Novgorod, 603950

Yu. Danilov

Physical–Technical Research Institute

Email: geyakovlev@etu.ru
Ресей, Nizhny Novgorod, 603950

B. Zvonkov

Physical–Technical Research Institute

Email: geyakovlev@etu.ru
Ресей, Nizhny Novgorod, 603950

A. Kudrin

Physical–Technical Research Institute

Email: geyakovlev@etu.ru
Ресей, Nizhny Novgorod, 603950


© Pleiades Publishing, Ltd., 2018

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