Ballistic Hole Emission Spectroscopy of Self-Assembled GeSi/Si(001) Nanoislands
- Авторлар: Filatov D.1, Guseinov D.1, Chalkov V.1, Denisov S.1, Shengurov V.1
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Мекемелер:
- Lobachevskii State University of Nizhny Novgorod
- Шығарылым: Том 52, № 5 (2018)
- Беттер: 590-592
- Бөлім: XXV International Symposium “Nanostructures: Physics and Technology”, Saint Petersburg, Russia, June 26–30, 2017. Nanostructure Characterization
- URL: https://journals.rcsi.science/1063-7826/article/view/203091
- DOI: https://doi.org/10.1134/S1063782618050068
- ID: 203091
Дәйексөз келтіру
Аннотация
Ballistic hole emission microscopy/spectroscopy has been applied to study the electronic structure of the hole states in the self-assembled GeSi/Si(001) nanoislands. The ballistic hole emission microscopic images demonstrated the spots of increased collector current related to the ballistic electron tunnelling via the confined valence band states in the GeSi/Si(001) nanoislands. In the ballistic hole emission spectra of the Ge hut clusters the stepwise features attributed to the quantum confined hole states have been observed. The results of present study demonstrate the capabilities of the ballistic hole emission microscopy/spectroscopy in the characterization of the electronic structures of the valence band states in the GeSi/Si nanostructures.
Авторлар туралы
D. Filatov
Lobachevskii State University of Nizhny Novgorod
Хат алмасуға жауапты Автор.
Email: dmitry_filatov@inbox.ru
Ресей, Nizhny Novgorod, 603950
D. Guseinov
Lobachevskii State University of Nizhny Novgorod
Email: dmitry_filatov@inbox.ru
Ресей, Nizhny Novgorod, 603950
V. Chalkov
Lobachevskii State University of Nizhny Novgorod
Email: dmitry_filatov@inbox.ru
Ресей, Nizhny Novgorod, 603950
S. Denisov
Lobachevskii State University of Nizhny Novgorod
Email: dmitry_filatov@inbox.ru
Ресей, Nizhny Novgorod, 603950
V. Shengurov
Lobachevskii State University of Nizhny Novgorod
Email: dmitry_filatov@inbox.ru
Ресей, Nizhny Novgorod, 603950