Biexciton Binding Energy in Spherical Quantum Dots with Γ8 Valence Band
- Авторлар: Golovatenko A.1, Semina M.1, Rodina A.1, Shubina T.1
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Мекемелер:
- Ioffe Institute
- Шығарылым: Том 52, № 5 (2018)
- Беттер: 554-557
- Бөлім: XXV International Symposium “Nanostructures: Physics and Technology”, Saint Petersburg, Russia, June 26–30, 2017. Excitons in Nanostructures
- URL: https://journals.rcsi.science/1063-7826/article/view/203005
- DOI: https://doi.org/10.1134/S106378261805010X
- ID: 203005
Дәйексөз келтіру
Аннотация
The biexciton binding energy in spherical CdSe/ZnSe quantum dots is calculated variationally in the framework of kp-perturbation theory. Smooth and abrupt confining potentials with the same localization area of carriers are compared for two limiting cases of light hole to heavy hole mass ratio β = mlh/mhh: β = 1 and β = 0. Accounting for correlations between carriers results in their polarized configuration and significantly increases the biexciton binding energy in comparison with the first order perturbation theory. For β = 0 in smooth confining potentials there are three nearby biexciton states separated by small energy gap between 1S3/2 and 1P3/2 hole states.
Авторлар туралы
A. Golovatenko
Ioffe Institute
Хат алмасуға жауапты Автор.
Email: sasha.pti@mail.ioffe.ru
Ресей, St. Petersburg
M. Semina
Ioffe Institute
Email: sasha.pti@mail.ioffe.ru
Ресей, St. Petersburg
A. Rodina
Ioffe Institute
Email: sasha.pti@mail.ioffe.ru
Ресей, St. Petersburg
T. Shubina
Ioffe Institute
Email: sasha.pti@mail.ioffe.ru
Ресей, St. Petersburg