Microstructure and Raman Scattering of Cu 2 ZnSnSe 4  Thin Films Deposited onto Flexible Metal Substrates

A. V. Stanchik; V. F. Gremenok; S. A. Bashkirov; M. S. Tivanov; R. L. Juškénas; G. F. Novikov; R. Giraitis; A. M. Saad

doi:10.1134/S1063782618020197

Microstructure and Raman Scattering of Cu₂ZnSnSe₄ Thin Films Deposited onto Flexible Metal Substrates

Авторлар: Stanchik A.¹, Gremenok V.¹, Bashkirov S.¹, Tivanov M.², Juškénas R.³, Novikov G.⁴, Giraitis R.³, Saad A.⁵
Мекемелер:
1. Scientific and Practical Materials Research Center
2. Belarusian State University
3. State Research Institute “Center for Physical Sciences and Technology”
4. Institute of Problems of Chemical Physics
5. Al-Balqa Applied University
Шығарылым: Том 52, № 2 (2018)
Беттер: 215-220
Бөлім: Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors
URL: https://journals.rcsi.science/1063-7826/article/view/202431
DOI: https://doi.org/10.1134/S1063782618020197
ID: 202431

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Аннотация

Cu₂ZnSnSe₄ thin films are produced by selenizing electrochemically layer-by-layer deposited and preliminarily annealed Cu–Zn–Sn precursors. For flexible metal substrates, Mo and Ta foils are used. The morphology, elemental and phase compositions, and crystal structure of Cu₂ZnSnSe₄ films are studied by scanning electron microscopy, X-ray spectral microanalysis, X-ray phase analysis, and Raman spectroscopy.