Electron Transport in PHEMT AlGaAs/InGaAs/GaAs Quantum Wells at Different Temperatures: Influence of One-Side δ-Si Doping
- Авторлар: Safonov D.1, Vinichenko A.1,2, Kargin N.1, Vasil’evskii I.1
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Мекемелер:
- National Research Nuclear University “MEPhI”
- Immanuel Kant Baltic Federal University
- Шығарылым: Том 52, № 2 (2018)
- Беттер: 189-194
- Бөлім: Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena
- URL: https://journals.rcsi.science/1063-7826/article/view/202412
- DOI: https://doi.org/10.1134/S106378261802015X
- ID: 202412
Дәйексөз келтіру
Аннотация
The influence of the concentration of δ doping with Si on the electron transport properties of Al0.25Ga0.75As/In0.2Ga0.8As/GaAs pseudomorphic quantum wells is studied in a broad temperature range of 4.2–300 K. A decrease in the doping efficiency at an electron concentration of >1.8 × 1012 cm–2 is found. This is caused by the effects of incomplete impurity ionization, which is also reflected on the temperature dependence of the electron concentration. A nonmonotonic variation in the electron mobility with increasing donor concentration, which is not associated with filling of the upper subband of size quantization, is observed. An increase in the mobility is associated with a rise in the Fermi momentum and screening, while its subsequent drop with increasing Si concentration is caused by the tunnel degradation of the spacer layer with a decrease in the conduction-band potential in the region of the δ-Si layer.
Авторлар туралы
D. Safonov
National Research Nuclear University “MEPhI”
Хат алмасуға жауапты Автор.
Email: safonov.dan@mail.ru
Ресей, Moscow, 115409
A. Vinichenko
National Research Nuclear University “MEPhI”; Immanuel Kant Baltic Federal University
Email: safonov.dan@mail.ru
Ресей, Moscow, 115409; Kaliningrad, 236016
N. Kargin
National Research Nuclear University “MEPhI”
Email: safonov.dan@mail.ru
Ресей, Moscow, 115409
I. Vasil’evskii
National Research Nuclear University “MEPhI”
Email: safonov.dan@mail.ru
Ресей, Moscow, 115409