Effect of intercalated hydrogen on the electron state of quasi-free graphene on a SiC substrate
- Авторлар: Davydov S.1,2
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Мекемелер:
- Ioffe Physical–Technical Institute
- St. Petersburg National Research University of Information Technologies, Mechanics, and Optics
- Шығарылым: Том 51, № 5 (2017)
- Беттер: 640-644
- Бөлім: Carbon Systems
- URL: https://journals.rcsi.science/1063-7826/article/view/199902
- DOI: https://doi.org/10.1134/S1063782617050062
- ID: 199902
Дәйексөз келтіру
Аннотация
To judge the role of intercalated hydrogen in the doping of quasi-free epitaxial graphene, two systems, specifically, (i) the graphene–NH-SiC{0001} and (ii) graphene–hydrogen single layer–NH-SiC{0001} structures (N = 4, 6) are considered. In case (i), the shift of the Dirac point of epitaxial graphene is induced by the electrostatic potential of spontaneous polarization of the substrate; in case (ii), the shift is due to the field of a double electrical layer formed because of the absorption of hydrogen atoms. It is shown that, in case (ii) compared to case (i), the concentration of holes in graphene is higher and the concentration of electrons is lower. This result is consistent with the currently available experimental data.
Авторлар туралы
S. Davydov
Ioffe Physical–Technical Institute; St. Petersburg National Research University of Information Technologies, Mechanics, and Optics
Хат алмасуға жауапты Автор.
Email: Sergei_Davydov@mail.ru
Ресей, St. Petersburg, 194021; St. Petersburg, 197101