Electrical and photoelectric properties of n-TiN/p-Hg3In2Te6 heterostructures
- Авторлар: Solovan M.1,2, Mostovyi A.1, Brus V.1,3, Maistruk E.1, Maryanchuk P.1
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Мекемелер:
- Yuriy Fedkovych Chernivtsi National University
- Politecnico di Torino
- Helmholtz-Zentrum Berlin für Materialien und Energie GmbH
- Шығарылым: Том 50, № 8 (2016)
- Беттер: 1020-1024
- Бөлім: Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena
- URL: https://journals.rcsi.science/1063-7826/article/view/197574
- DOI: https://doi.org/10.1134/S1063782616080236
- ID: 197574
Дәйексөз келтіру
Аннотация
n-TiN/p-Hg3In2Te6 heterostructures are fabricated by depositing a thin n-type titanium nitride (TiN) film onto prepared p-type Hg3In2Te6 plates using reactive magnetron sputtering. Their electrical and photoelectric properties are studied. Dominant charge-transport mechanisms under forward bias are analyzed within tunneling-recombination and tunneling models. The fabricated n-TiN/p-Hg3In2Te6 structures have the following photoelectric parameters at an illumination intensity of 80 mW/cm2: the open-circuit voltage is VOC = 0.52 V, the short-circuit current is ISC = 0.265 mA/cm2, and the fill factor is FF = 0.39.
Авторлар туралы
M. Solovan
Yuriy Fedkovych Chernivtsi National University; Politecnico di Torino
Хат алмасуға жауапты Автор.
Email: m.solovan@chnu.edu.ua
Украина, ul. Kotsubinskyi 2, Chernivtsi, 58012; 10129, Torino
A. Mostovyi
Yuriy Fedkovych Chernivtsi National University
Email: m.solovan@chnu.edu.ua
Украина, ul. Kotsubinskyi 2, Chernivtsi, 58012
V. Brus
Yuriy Fedkovych Chernivtsi National University; Helmholtz-Zentrum Berlin für Materialien und Energie GmbH
Email: m.solovan@chnu.edu.ua
Украина, ul. Kotsubinskyi 2, Chernivtsi, 58012; Berlin, 12489
E. Maistruk
Yuriy Fedkovych Chernivtsi National University
Email: m.solovan@chnu.edu.ua
Украина, ul. Kotsubinskyi 2, Chernivtsi, 58012
P. Maryanchuk
Yuriy Fedkovych Chernivtsi National University
Email: m.solovan@chnu.edu.ua
Украина, ul. Kotsubinskyi 2, Chernivtsi, 58012