Author Details
Shemukhin, A. A.
Issue | Section | Title | File |
Vol 50, No 2 (2016) | Fabrication, Treatment, and Testing of Materials and Structures | Layer-by-layer composition and structure of silicon subjected to combined gallium and nitrogen ion implantation for the ion synthesis of gallium nitride | |
Vol 51, No 6 (2017) | Nonelectronic Properties of Semiconductors (Atomic Structure, Diffusion) | Study of the distribution profile of iron ions implanted into silicon | |
Vol 53, No 6 (2019) | Surfaces, Interfaces, and Thin Films | Features of Defect Formation in Nanostructured Silicon under Ion Irradiation | |
Vol 53, No 8 (2019) | Nonelectronic Properties of Semiconductors (Atomic Structure, Diffusion) | Influence of the Charge State of Xenon Ions on the Depth Distribution Profile Upon Implantation into Silicon | |
Vol 53, No 12 (2019) | Carbon Systems | Modification of Carbon-Nanotube Wettability by Ion Irradiation |