Widening the Length Distributions in Irregular Arrays of Self-Catalyzed III–V Nanowires
- Authors: Berdnikov Y.1, Sibirev N.V.1, Koryakin A.1
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Affiliations:
- ITMO University
- Issue: Vol 53, No 16 (2019)
- Pages: 2068-2071
- Section: Nanostructures Technology
- URL: https://journals.rcsi.science/1063-7826/article/view/207586
- DOI: https://doi.org/10.1134/S1063782619120066
- ID: 207586
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Abstract
In this work, we account the local variations of nanowire number density to extend the previous approaches to modeling of III–V nanowire length distributions in lithography-free self-catalyzed growth processes. We calculate the growth rate controlled by the re-evaporation of group V atoms from the substrate and derive the analytical expressions for length distributions in irregular arrays of nanowires. The obtained theoretical results fit well the experimentally observed statistics of self-catalyzed GaAs nanowires grown by molecular beam epitaxy on Si/SiOx substrates.
Keywords
About the authors
Y. Berdnikov
ITMO University
Author for correspondence.
Email: yury.berdnikov@itmo.ru
Russian Federation, St. Petersburg
N. V. Sibirev
ITMO University
Author for correspondence.
Email: nick.sibirev@itmo.ru
Russian Federation, St. Petersburg
A. Koryakin
ITMO University
Author for correspondence.
Email: alexkorya@gmail.com
Russian Federation, St. Petersburg