Structure and Electrical Properties of (ZnO/SiO2)25 Thin Films
- Authors: Volochaev M.N.1, Kalinin Y.E.2, Kashirin M.A.2, Makagonov V.A.2, Pankov S.Y.2, Bassarab V.V.2
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Affiliations:
- Kirensky Institute of Physics, Krasnoyarsk Scientific Center, Siberian Branch, Russian Academy of Sciences
- Voronezh State Technical University
- Issue: Vol 53, No 11 (2019)
- Pages: 1465-1471
- Section: Surfaces, Interfaces, and Thin Films
- URL: https://journals.rcsi.science/1063-7826/article/view/207279
- DOI: https://doi.org/10.1134/S106378261911023X
- ID: 207279
Cite item
Abstract
(ZnO/SiO2)25 thin-film multilayers consisting of nanocrystalline ZnO layers and amorphous SiO2 spacers with a bilayer thickness from 6 to 10 nm are synthesized in a single deposition process. An analysis of the temperature dependences of the electrical resistivity of (ZnO/SiO2)25 thin films shows that, in the temperature range of 77–300 K, the dominant conductivity mechanism successively changes from hopping conductivity with a variable hopping length in a narrow energy band near the Fermi level at temperatures of 77–250 K to thermally activated impurity conductivity around room temperature. Using the obtained temperature dependences of the electrical resistivity, the effective density of localized states at the Fermi level and the activation energy of impurity levels are estimated. The effect of heat treatment on the structure and electrical properties of the synthesized films is examined. It is established that in (ZnO/SiO2)25 thin-film systems at temperatures of 580–600°C, the ZnO and SiO2 layers chemically interact, which is accompanied by destruction of the multilayer structure and formation of the Zn2SiO4 compound with a tetragonal structure (sp. gr. I-42d).
About the authors
M. N. Volochaev
Kirensky Institute of Physics, Krasnoyarsk Scientific Center, Siberian Branch, Russian Academy of Sciences
Email: vlad_makagonov@mail.ru
Russian Federation, Krasnoyarsk, 660036
Yu. E. Kalinin
Voronezh State Technical University
Email: vlad_makagonov@mail.ru
Russian Federation, Voronezh, 394026
M. A. Kashirin
Voronezh State Technical University
Email: vlad_makagonov@mail.ru
Russian Federation, Voronezh, 394026
V. A. Makagonov
Voronezh State Technical University
Author for correspondence.
Email: vlad_makagonov@mail.ru
Russian Federation, Voronezh, 394026
S. Yu. Pankov
Voronezh State Technical University
Email: vlad_makagonov@mail.ru
Russian Federation, Voronezh, 394026
V. V. Bassarab
Voronezh State Technical University
Email: vlad_makagonov@mail.ru
Russian Federation, Voronezh, 394026