Plasmon Enhancement of the Electric Field in Mid-Infrared Ge/Si Quantum-Dot Photodetectors with Different Thicknesses of the Active Region
- Authors: Bloshkin A.A.1,2, Yakimov A.I.1, Dvurechenskii A.V.1,2
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Affiliations:
- Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
- Novosibirsk State University
- Issue: Vol 53, No 2 (2019)
- Pages: 195-199
- Section: Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena
- URL: https://journals.rcsi.science/1063-7826/article/view/205694
- DOI: https://doi.org/10.1134/S1063782619020039
- ID: 205694
Cite item
Abstract
The spatial distribution of the electric field in Ge/Si photodetector heterostructures coated with a gold film containing a regular two-dimensional array of subwavelength apertures is calculated by the finite-element method. The array period and aperture diameter are 1.2 and 0.7 μm, respectively. The efficiency of field enhancement is determined for different thicknesses of the active region occupied by quantum dots. It is demonstrated that the field-enhancement factor for an electromagnetic wave incident on the structure from the side of the substrate is ~3.5 times larger than that for a wave incident from the opposite side. In the first case, the field-enhancement factor varies nonmonotonically with the thickness of the active region.
About the authors
A. A. Bloshkin
Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences; Novosibirsk State University
Author for correspondence.
Email: bloshkin@isp.nsc.ru
Russian Federation, Novosibirsk, 630090; Novosibirsk, 630090
A. I. Yakimov
Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
Email: bloshkin@isp.nsc.ru
Russian Federation, Novosibirsk, 630090
A. V. Dvurechenskii
Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences; Novosibirsk State University
Email: bloshkin@isp.nsc.ru
Russian Federation, Novosibirsk, 630090; Novosibirsk, 630090