Near-Infrared InGaN Alloys Grown on High-In-Composition InGaN Buffer Layer
- Authors: Lianhong Yang 1, Guo F.1, Zhang B.1,2, Li Y.1, Chen D.1,2
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Affiliations:
- Department of Physics, Changji College
- Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University
- Issue: Vol 52, No 16 (2018)
- Pages: 2026-2029
- Section: Surfaces, Interfaces, and Thin Films
- URL: https://journals.rcsi.science/1063-7826/article/view/205282
- DOI: https://doi.org/10.1134/S106378261816039X
- ID: 205282
Cite item
Abstract
Near-infrared InGaN alloys were grown on a strain-relaxed high-In-composition InGaN buffer layer based on GaN/sapphire substrate by plasma assisted molecular beam epitaxy. The In compositions of the InGaN light emitting layer and buffer layer determined by X-ray diffraction analysis are 56.7 and 61.1%, respectively. Transmission electron microscopy result shows that no dislocations newly generated at the interface of the InGaN structure layer and the underlying InGaN buffer layer can be observed obviously. The cathodoluminescence spectra exhibit two strong emission peaks at the near-infrared wavelengths of 1090 and 1200 nm, which can be attributed to intrinsic transition and recombination processes of the fabricated InGaN alloys according to the calculation using the energy versus composition equation with a reasonable bowing parameter.
About the authors
Lianhong Yang
Department of Physics, Changji College
Email: zbhcjxy@163.com
China, Changji, 831100
Fuqiang Guo
Department of Physics, Changji College
Email: zbhcjxy@163.com
China, Changji, 831100
Baohua Zhang
Department of Physics, Changji College; Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering,Nanjing University
Author for correspondence.
Email: zbhcjxy@163.com
China, Changji, 831100; Nanjing, 210093
Yanqing Li
Department of Physics, Changji College
Email: zbhcjxy@163.com
China, Changji, 831100
Dunjun Chen
Department of Physics, Changji College; Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering,Nanjing University
Author for correspondence.
Email: zbhcjxy@163.com
China, Changji, 831100; Nanjing, 210093