Ion Synthesis: Si–Ge Quantum Dots
- Authors: Gerasimenko N.N.1, Balakleyskiy N.S.2, Volokhovskiy A.D.3, Smirnov D.I.4, Zaporozhan O.A.1
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Affiliations:
- National Research University of Electronic Technology
- Angstrrem
- Angstrem-T
- P.N. Lebedev Physical Institute of the RAS
- Issue: Vol 52, No 5 (2018)
- Pages: 625-627
- Section: XXV International Symposium “Nanostructures: Physics and Technology”, Saint Petersburg, Russia, June 26–30, 2017. Nanostructure Technology
- URL: https://journals.rcsi.science/1063-7826/article/view/203222
- DOI: https://doi.org/10.1134/S1063782618050081
- ID: 203222
Cite item
Abstract
We present a method of Si–Ge QDs formation by ion beam implantation (IBI) technique and high temperature annealing for self-organization. Implantation doses varied from 1014 to 1017 cm–2, ion energies ranged from 50 to 150 keV, annealing proceeded at temperature of 950 to 1050°C in argon environment. Formed QDs show strong infrared (IR) photoluminescence (PL) in the temperature region 15–250 K.
About the authors
N. N. Gerasimenko
National Research University of Electronic Technology
Email: balakleyskiy@gmail.com
Russian Federation, Moscow, 124498
N. S. Balakleyskiy
Angstrrem
Author for correspondence.
Email: balakleyskiy@gmail.com
Russian Federation, Moscow, 124460
A. D. Volokhovskiy
Angstrem-T
Email: balakleyskiy@gmail.com
Russian Federation, Moscow, 124460
D. I. Smirnov
P.N. Lebedev Physical Institute of the RAS
Email: balakleyskiy@gmail.com
Russian Federation, Moscow, 119991
O. A. Zaporozhan
National Research University of Electronic Technology
Email: balakleyskiy@gmail.com
Russian Federation, Moscow, 124498