Valence-band offsets in strained SiGeSn/Si layers with different tin contents
- Authors: Bloshkin A.A.1,2, Yakimov A.I.1,3, Timofeev V.A.1, Tuktamyshev A.R.1, Nikiforov A.I.1,3, Murashov V.V.4
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Affiliations:
- Rzhanov Institute of Semiconductor Physics, Siberian Branch
- Novosibirsk State University
- National Research Tomsk State University
- Novosibirsk State Technical University
- Issue: Vol 51, No 3 (2017)
- Pages: 329-334
- Section: Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena
- URL: https://journals.rcsi.science/1063-7826/article/view/199582
- DOI: https://doi.org/10.1134/S1063782617030058
- ID: 199582
Cite item
Abstract
Admittance spectroscopy is used to study hole states in Si0.7–yGe0.3Sny/Si quantum wells in the tin content range y = 0.04–0.1. It is found that the hole binding energy increases with tin content. The hole size-quantization energies in structures containing a pseudomorphic Si0.7–yGe0.3Sny layer in the Si matrix are determined using the 6-band kp method. The valence-band offset at the Si0.7–yGe0.3Sny heterointerface is determined by combining the numerical calculation results and experimental data. It is found that the dependence of the experimental values of the valence-band offsets between pseudomorphic Si0.7–yGe0.3Sny layers and Si on the tin content is described by the expression ΔEVexp = (0.21 ± 0.01) + (3.35 ± 7.8 × 10–4)y eV.
About the authors
A. A. Bloshkin
Rzhanov Institute of Semiconductor Physics, Siberian Branch; Novosibirsk State University
Author for correspondence.
Email: bloshkin@isp.nsc.ru
Russian Federation, pr. Akad. Lavrent’eva 13, Novosibirsk, 630090; ul. Pirogova 2, Novosibirsk, 630090
A. I. Yakimov
Rzhanov Institute of Semiconductor Physics, Siberian Branch; National Research Tomsk State University
Email: bloshkin@isp.nsc.ru
Russian Federation, pr. Akad. Lavrent’eva 13, Novosibirsk, 630090; pr. Lenina 36, Tomsk, 634050
V. A. Timofeev
Rzhanov Institute of Semiconductor Physics, Siberian Branch
Email: bloshkin@isp.nsc.ru
Russian Federation, pr. Akad. Lavrent’eva 13, Novosibirsk, 630090
A. R. Tuktamyshev
Rzhanov Institute of Semiconductor Physics, Siberian Branch
Email: bloshkin@isp.nsc.ru
Russian Federation, pr. Akad. Lavrent’eva 13, Novosibirsk, 630090
A. I. Nikiforov
Rzhanov Institute of Semiconductor Physics, Siberian Branch; National Research Tomsk State University
Email: bloshkin@isp.nsc.ru
Russian Federation, pr. Akad. Lavrent’eva 13, Novosibirsk, 630090; pr. Lenina 36, Tomsk, 634050
V. V. Murashov
Novosibirsk State Technical University
Email: bloshkin@isp.nsc.ru
Russian Federation, pr. K. Marx 20, Novosibirsk, 630073