Influence of the doping type and level on the morphology of porous Si formed by galvanic etching
- Authors: Pyatilova O.V.1, Gavrilov S.A.1, Shilyaeva Y.I.1, Pavlov A.A.2, Shaman Y.P.3, Dudin A.A.2
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Affiliations:
- National Research University of Electronic Technology (MIET)
- Institute of Nanotechnology of Microelectronics
- Scientific-Manufacturing Complex “Technological Centre” MIET
- Issue: Vol 51, No 2 (2017)
- Pages: 173-177
- Section: Surfaces, Interfaces, and Thin Films
- URL: https://journals.rcsi.science/1063-7826/article/view/199429
- DOI: https://doi.org/10.1134/S1063782617020178
- ID: 199429
Cite item
Abstract
The formation of porous silicon (por-Si) layers by the galvanic etching of single-crystal Si samples (doped with boron or phosphorus) in an HF/C2H5OH/H2O2 solution is investigated. The por-Si layers are analyzed by the capillary condensation of nitrogen and scanning electron microscopy (SEM). The dependences of the morphological characteristics of por-Si (pore diameter, specific surface area, pore volume, and thickness of the pore walls), which determine the por-Si combustion kinetics, on the dopant type and initial wafer resistivity are established.
About the authors
O. V. Pyatilova
National Research University of Electronic Technology (MIET)
Author for correspondence.
Email: 5ilova87@gmail.com
Russian Federation, Moscow, 124498
S. A. Gavrilov
National Research University of Electronic Technology (MIET)
Email: 5ilova87@gmail.com
Russian Federation, Moscow, 124498
Yu. I. Shilyaeva
National Research University of Electronic Technology (MIET)
Email: 5ilova87@gmail.com
Russian Federation, Moscow, 124498
A. A. Pavlov
Institute of Nanotechnology of Microelectronics
Email: 5ilova87@gmail.com
Russian Federation, Moscow, 119991
Yu. P. Shaman
Scientific-Manufacturing Complex “Technological Centre” MIET
Email: 5ilova87@gmail.com
Russian Federation, Moscow, 124498
A. A. Dudin
Institute of Nanotechnology of Microelectronics
Email: 5ilova87@gmail.com
Russian Federation, Moscow, 119991