Optical properties of metamorphic GaAs/InAlGaAs/InGaAs heterostructures with InAs/InGaAs quantum wells, emitting light in the 1250–1400-nm spectral range
- Authors: Egorov A.Y.1,2,3, Karachinsky L.Y.1,2,3, Novikov I.I.1,2,3, Babichev A.V.1,2,3, Nevedomskiy V.N.1, Bugrov V.E.2
-
Affiliations:
- Ioffe Physical–Technical Institute
- St. Petersburg National Research University of Information Technologies, Mechanics, and Optics ITMO
- Connector Optics OOO
- Issue: Vol 50, No 5 (2016)
- Pages: 612-615
- Section: Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena
- URL: https://journals.rcsi.science/1063-7826/article/view/197080
- DOI: https://doi.org/10.1134/S1063782616050079
- ID: 197080
Cite item
Abstract
It is demonstrated that metamorphic GaAs/InAlGaAs/InGaAs heterostructures with InAs/InGaAs quantum wells, which emit light in the 1250–1400 nm spectral range, can be fabricated by molecular-beam epitaxy. The structural and optical properties of the heterostructures are studied by X-ray diffraction analysis, transmission electron microscopy, and the photoluminescence method. Comparative analysis of the integrated photoluminescence intensity of the heterostructures and a reference sample confirm the high efficiency of radiative recombination in the heterostructures. It is confirmed by transmission electron microscopy that dislocations do not penetrate into the active region of the metamorphic heterostructures, where the radiative recombination of carriers occurs.
About the authors
A. Yu. Egorov
Ioffe Physical–Technical Institute; St. Petersburg National Research University of Information Technologies, Mechanics, and Optics ITMO; Connector Optics OOO
Author for correspondence.
Email: anton@beam.ioffe.ru
Russian Federation, St. Petersburg, 194021; St. Petersburg, 197101; St. Petersburg, 194292
L. Ya. Karachinsky
Ioffe Physical–Technical Institute; St. Petersburg National Research University of Information Technologies, Mechanics, and Optics ITMO; Connector Optics OOO
Email: anton@beam.ioffe.ru
Russian Federation, St. Petersburg, 194021; St. Petersburg, 197101; St. Petersburg, 194292
I. I. Novikov
Ioffe Physical–Technical Institute; St. Petersburg National Research University of Information Technologies, Mechanics, and Optics ITMO; Connector Optics OOO
Email: anton@beam.ioffe.ru
Russian Federation, St. Petersburg, 194021; St. Petersburg, 197101; St. Petersburg, 194292
A. V. Babichev
Ioffe Physical–Technical Institute; St. Petersburg National Research University of Information Technologies, Mechanics, and Optics ITMO; Connector Optics OOO
Email: anton@beam.ioffe.ru
Russian Federation, St. Petersburg, 194021; St. Petersburg, 197101; St. Petersburg, 194292
V. N. Nevedomskiy
Ioffe Physical–Technical Institute
Email: anton@beam.ioffe.ru
Russian Federation, St. Petersburg, 194021
V. E. Bugrov
St. Petersburg National Research University of Information Technologies, Mechanics, and Optics ITMO
Email: anton@beam.ioffe.ru
Russian Federation, St. Petersburg, 197101