GaAs structures with a gate dielectric based on aluminum-oxide layers
- Authors: Kalentyeva I.L.1, Vikhrova O.V.1, Zdoroveyshchev A.V.1, Danilov Y.A.1, Kudrin A.V.1
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Affiliations:
- Physico-Technical Research Institute of Lobachevsky State University of Nizhny Novgorod
- Issue: Vol 50, No 2 (2016)
- Pages: 204-207
- Section: Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena
- URL: https://journals.rcsi.science/1063-7826/article/view/196774
- DOI: https://doi.org/10.1134/S106378261602010X
- ID: 196774
Cite item
Abstract
Different types of dielectrics obtained by low-temperature electron-beam sputtering are studied; these dielectrics include Al2O3 layers and Al2O3/SiO2/Al2O3 three-layer compositions. The dependence of the electrical strength of Al2O3 layers on their thickness is determined. It is established that formation of the three-layer dielectric Al2O3/SiO2/Al2O3 makes it possible to increase the range of operating voltages up to 60 V for structures with a gate electrode. It is shown that it is possible to control the density of charge carriers (holes) in the two-dimensional conduction channel of GaAs structures by changing the gate voltage when the Al2O3/SiO2/Al2O3 structure is used as a gate dielectric.
Keywords
About the authors
I. L. Kalentyeva
Physico-Technical Research Institute of Lobachevsky State University of Nizhny Novgorod
Author for correspondence.
Email: istery@rambler.ru
Russian Federation, Nizhny Novgorod, 603950
O. V. Vikhrova
Physico-Technical Research Institute of Lobachevsky State University of Nizhny Novgorod
Email: istery@rambler.ru
Russian Federation, Nizhny Novgorod, 603950
A. V. Zdoroveyshchev
Physico-Technical Research Institute of Lobachevsky State University of Nizhny Novgorod
Email: istery@rambler.ru
Russian Federation, Nizhny Novgorod, 603950
Yu. A. Danilov
Physico-Technical Research Institute of Lobachevsky State University of Nizhny Novgorod
Email: istery@rambler.ru
Russian Federation, Nizhny Novgorod, 603950
A. V. Kudrin
Physico-Technical Research Institute of Lobachevsky State University of Nizhny Novgorod
Email: istery@rambler.ru
Russian Federation, Nizhny Novgorod, 603950