Electron transport and optical properties of structures with atomic tin nanowires on vicinal GaAs substrates
- Authors: Khabibullin R.A.1, Yachmenev A.E.1, Lavrukhin D.V.1, Ponomarev D.S.1, Bugayev A.S.1, Maltsev P.P.1
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Affiliations:
- Institute of Ultrahigh Frequency Semiconductor Electronics
- Issue: Vol 50, No 2 (2016)
- Pages: 185-190
- Section: Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena
- URL: https://journals.rcsi.science/1063-7826/article/view/196757
- DOI: https://doi.org/10.1134/S1063782616020123
- ID: 196757
Cite item
Abstract
Electron transport and optical properties are studied for structures with atomic tin nanowires (Sn-NWs) on vicinal GaAs substrates with misorientation angles of 0.3 and 3° with respect to the exact (100) orientation. Saturation-current anisotropy is revealed in the current–voltage characteristics of the samples for current flows along (‖ orientation) and across (⊥ orientation) the Sn-NWs: the current ratios I‖/I⊥ are ∼1.2 and ∼2.5 for homostructures and pseudomorphic high electron mobility transistor (PHEMT) structures, respectively. The effect of the pulling voltage and illumination on current oscillations is studied in real time in the case of current flows perpendicular to the Sn-NWs. Clear anisotropy of the PHEMT frequency characteristics is shown.
Keywords
About the authors
R. A. Khabibullin
Institute of Ultrahigh Frequency Semiconductor Electronics
Author for correspondence.
Email: khabibullin@isvch.ru
Russian Federation, Nagornyi pr. 7, str.5, Moscow, 117105
A. E. Yachmenev
Institute of Ultrahigh Frequency Semiconductor Electronics
Email: khabibullin@isvch.ru
Russian Federation, Nagornyi pr. 7, str.5, Moscow, 117105
D. V. Lavrukhin
Institute of Ultrahigh Frequency Semiconductor Electronics
Email: khabibullin@isvch.ru
Russian Federation, Nagornyi pr. 7, str.5, Moscow, 117105
D. S. Ponomarev
Institute of Ultrahigh Frequency Semiconductor Electronics
Email: khabibullin@isvch.ru
Russian Federation, Nagornyi pr. 7, str.5, Moscow, 117105
A. S. Bugayev
Institute of Ultrahigh Frequency Semiconductor Electronics
Email: khabibullin@isvch.ru
Russian Federation, Nagornyi pr. 7, str.5, Moscow, 117105
P. P. Maltsev
Institute of Ultrahigh Frequency Semiconductor Electronics
Email: khabibullin@isvch.ru
Russian Federation, Nagornyi pr. 7, str.5, Moscow, 117105