Author Details
Remesnik, V.
Issue | Section | Title | File |
Vol 52, No 6 (2018) | Electronic Properties of Semiconductors | Electrophysical Properties of p-Type Undoped and Arsenic-Doped Hg1 – xCdxTe Epitaxial Layers with x ≈ 0.4 Grown by the MOCVD Method |