Author Details
Naryshkina, V. G.
Issue | Section | Title | File |
Vol 51, No 9 (2017) | Surfaces, Interfaces, and Thin Films | Generation of surface electron states with a silicon–ultrathin-oxide interface under the field-induced damage of metal–oxide–semiconductor structures | |
Vol 53, No 1 (2019) | Physics of Semiconductor Devices | On the Nature of the Increase in the Electron Mobility in the Inversion Channel at the Silicon–Oxide Interface after the Field Effect |