Author Details
Berezovskaia, T. N.
| Issue | Section | Title | File |
| Vol 52, No 12 (2018) | Xxii International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 12–15, 2018 | Features of the Initial Stage of GaN Growth on Si(111) Substrates by Nitrogen-Plasma-Assisted Molecular-Beam Epitaxy | |
| Vol 53, No 9 (2019) | Xxiii International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 11–14, 2019 | On the Specific Features of the Plasma-Assisted MBE Synthesis of n+-GaN Layers on GaN/c-Al2O3 Templates |