| 期 |
标题 |
文件 |
| 卷 50, 编号 3 (2016) |
Role of Acoustoelectric Interaction in the Formation of Nanoscale Periodic Structures of Adsorbed Atoms |
(Eng)
|
|
Peleshchak R., Lazurchak I., Kuzyk O., Dan’kiv O., Zegrya G.
|
| 卷 50, 编号 2 (2016) |
On the surface photovoltaic effect in a multivalley semiconductor in an external magnetic field |
(Eng)
|
|
Rasulov V., Rasulov R.
|
| 卷 50, 编号 2 (2016) |
Study of the surface of GaAs after etching in high-frequency and glow discharge plasma by atomic force microscopy |
(Eng)
|
|
Dunaev A., Murin D., Pivovarenok S.
|
| 卷 50, 编号 2 (2016) |
Halogen adsorption at an As-stabilized β2–GaAs (001)–(2 × 4) surface |
(Eng)
|
|
Bakulin A., Kulkova S.
|
| 卷 50, 编号 2 (2016) |
On the electrical and optical properties of oxide nanolayers produced by the thermal oxidation of metal tin |
(Eng)
|
|
Ryabtsev S., Chuvenkova O., Kannykin S., Popov A., Ryabtseva N., Voischev S., Turishchev S., Domashevskaya E.
|
| 卷 50, 编号 1 (2016) |
Optical properties of PbS thin films |
(Eng)
|
|
Akhmedov O., Guseinaliyev M., Abdullaev N., Abdullaev N., Babaev S., Kasumov N.
|
| 卷 50, 编号 1 (2016) |
Morphological stability of the atomically clean surface of silicon (100) crystals after microwave plasma-chemical processing |
(Eng)
|
|
Yafarov R., Shanygin V.
|
| 卷 50, 编号 1 (2016) |
Growth, structure, and properties of GaAs-based (GaAs)1–x–y(Ge2)x(ZnSe)y epitaxial films |
(Eng)
|
|
Zaynabidinov S., Saidov A., Leiderman A., Kalanov M., Usmonov S., Rustamova V., Boboev A.
|
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