An Integrated High-Capacitance Varicap Based on Porous Silicon
- 作者: Timoshenkov S.1, Boyko A.1, Gaev D.2, Kalmykov R.2
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隶属关系:
- National Research University of Electronic Technology
- Berbekov Kabardino-Balkarian State University
- 期: 卷 47, 编号 7 (2018)
- 页面: 465-467
- 栏目: Article
- URL: https://journals.rcsi.science/1063-7397/article/view/186955
- DOI: https://doi.org/10.1134/S1063739718070156
- ID: 186955
如何引用文章
详细
The potential for use of porous silicon in designing varicaps with high capacitance ratios satisfying the requirements of microelectronics and microsystems engineering is considered. The technique for the fabrication of capacitor structures via the electrodeposition of copper onto porous silicon is presented. The morphological features of the obtained structures are examined and the specific capacitance of varicaps is determined. The prospects for the application of varicaps based on porous silicon in integrated electronics are outlined.
作者简介
S. Timoshenkov
National Research University of Electronic Technology
编辑信件的主要联系方式.
Email: spt@miee.ru
俄罗斯联邦, Moscow, 124498
A. Boyko
National Research University of Electronic Technology
Email: spt@miee.ru
俄罗斯联邦, Moscow, 124498
D. Gaev
Berbekov Kabardino-Balkarian State University
Email: spt@miee.ru
俄罗斯联邦, Nalchik, 360004
R. Kalmykov
Berbekov Kabardino-Balkarian State University
Email: spt@miee.ru
俄罗斯联邦, Nalchik, 360004