An Integrated High-Capacitance Varicap Based on Porous Silicon
- Авторы: Timoshenkov S.1, Boyko A.1, Gaev D.2, Kalmykov R.2
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Учреждения:
- National Research University of Electronic Technology
- Berbekov Kabardino-Balkarian State University
- Выпуск: Том 47, № 7 (2018)
- Страницы: 465-467
- Раздел: Article
- URL: https://journals.rcsi.science/1063-7397/article/view/186955
- DOI: https://doi.org/10.1134/S1063739718070156
- ID: 186955
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Аннотация
The potential for use of porous silicon in designing varicaps with high capacitance ratios satisfying the requirements of microelectronics and microsystems engineering is considered. The technique for the fabrication of capacitor structures via the electrodeposition of copper onto porous silicon is presented. The morphological features of the obtained structures are examined and the specific capacitance of varicaps is determined. The prospects for the application of varicaps based on porous silicon in integrated electronics are outlined.
Об авторах
S. Timoshenkov
National Research University of Electronic Technology
Автор, ответственный за переписку.
Email: spt@miee.ru
Россия, Moscow, 124498
A. Boyko
National Research University of Electronic Technology
Email: spt@miee.ru
Россия, Moscow, 124498
D. Gaev
Berbekov Kabardino-Balkarian State University
Email: spt@miee.ru
Россия, Nalchik, 360004
R. Kalmykov
Berbekov Kabardino-Balkarian State University
Email: spt@miee.ru
Россия, Nalchik, 360004