An Integrated High-Capacitance Varicap Based on Porous Silicon
- Авторлар: Timoshenkov S.1, Boyko A.1, Gaev D.2, Kalmykov R.2
-
Мекемелер:
- National Research University of Electronic Technology
- Berbekov Kabardino-Balkarian State University
- Шығарылым: Том 47, № 7 (2018)
- Беттер: 465-467
- Бөлім: Article
- URL: https://journals.rcsi.science/1063-7397/article/view/186955
- DOI: https://doi.org/10.1134/S1063739718070156
- ID: 186955
Дәйексөз келтіру
Аннотация
The potential for use of porous silicon in designing varicaps with high capacitance ratios satisfying the requirements of microelectronics and microsystems engineering is considered. The technique for the fabrication of capacitor structures via the electrodeposition of copper onto porous silicon is presented. The morphological features of the obtained structures are examined and the specific capacitance of varicaps is determined. The prospects for the application of varicaps based on porous silicon in integrated electronics are outlined.
Авторлар туралы
S. Timoshenkov
National Research University of Electronic Technology
Хат алмасуға жауапты Автор.
Email: spt@miee.ru
Ресей, Moscow, 124498
A. Boyko
National Research University of Electronic Technology
Email: spt@miee.ru
Ресей, Moscow, 124498
D. Gaev
Berbekov Kabardino-Balkarian State University
Email: spt@miee.ru
Ресей, Nalchik, 360004
R. Kalmykov
Berbekov Kabardino-Balkarian State University
Email: spt@miee.ru
Ресей, Nalchik, 360004