Effect of diamond dicing of SiC device wafers on the technical and operational parameters of monolithic integrated circuits


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详细

This paper is devoted to developing and optimizing the processing route that improves the effectiveness of diamond dicing of SiC device wafers with monolithic microwave integrated circuits (MMICs). The results of the experimental investigation of the diamond dicing effect on the MMIC parameters in the developed processing route are presented.

作者简介

S. Gamkrelidze

Institute of Ultra-High Frequency Semiconductor Electronics

Email: aa-trofimov@yandex.ru
俄罗斯联邦, Moscow, 117105

A. Trofimov

Institute of Ultra-High Frequency Semiconductor Electronics

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Email: aa-trofimov@yandex.ru
俄罗斯联邦, Moscow, 117105

N. Shchavruk

Institute of Ultra-High Frequency Semiconductor Electronics

Email: aa-trofimov@yandex.ru
俄罗斯联邦, Moscow, 117105


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