Effect of diamond dicing of SiC device wafers on the technical and operational parameters of monolithic integrated circuits
- 作者: Gamkrelidze S.1, Trofimov A.1, Shchavruk N.1
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隶属关系:
- Institute of Ultra-High Frequency Semiconductor Electronics
- 期: 卷 46, 编号 5 (2017)
- 页面: 323-328
- 栏目: Article
- URL: https://journals.rcsi.science/1063-7397/article/view/186504
- DOI: https://doi.org/10.1134/S1063739717050031
- ID: 186504
如何引用文章
详细
This paper is devoted to developing and optimizing the processing route that improves the effectiveness of diamond dicing of SiC device wafers with monolithic microwave integrated circuits (MMICs). The results of the experimental investigation of the diamond dicing effect on the MMIC parameters in the developed processing route are presented.
作者简介
S. Gamkrelidze
Institute of Ultra-High Frequency Semiconductor Electronics
Email: aa-trofimov@yandex.ru
俄罗斯联邦, Moscow, 117105
A. Trofimov
Institute of Ultra-High Frequency Semiconductor Electronics
编辑信件的主要联系方式.
Email: aa-trofimov@yandex.ru
俄罗斯联邦, Moscow, 117105
N. Shchavruk
Institute of Ultra-High Frequency Semiconductor Electronics
Email: aa-trofimov@yandex.ru
俄罗斯联邦, Moscow, 117105