Enviar artigo por via de e-mail Effect of diamond dicing of SiC device wafers on the technical and operational parameters of monolithic integrated circuits
- Autores: Gamkrelidze S.1, Trofimov A.1, Shchavruk N.1
-
Afiliações:
- Institute of Ultra-High Frequency Semiconductor Electronics
- Edição: Volume 46, Nº 5 (2017)
- Páginas: 323-328
- Seção: Article
- URL: https://journals.rcsi.science/1063-7397/article/view/186504
- DOI: https://doi.org/10.1134/S1063739717050031
- ID: 186504
Citar
Acesso aberto
Acesso está concedido
Somente assinantes
Resumo
This paper is devoted to developing and optimizing the processing route that improves the effectiveness of diamond dicing of SiC device wafers with monolithic microwave integrated circuits (MMICs). The results of the experimental investigation of the diamond dicing effect on the MMIC parameters in the developed processing route are presented.
Sobre autores
S. Gamkrelidze
Institute of Ultra-High Frequency Semiconductor Electronics
Email: aa-trofimov@yandex.ru
Rússia, Moscow, 117105
A. Trofimov
Institute of Ultra-High Frequency Semiconductor Electronics
Autor responsável pela correspondência
Email: aa-trofimov@yandex.ru
Rússia, Moscow, 117105
N. Shchavruk
Institute of Ultra-High Frequency Semiconductor Electronics
Email: aa-trofimov@yandex.ru
Rússia, Moscow, 117105
