Effect of diamond dicing of SiC device wafers on the technical and operational parameters of monolithic integrated circuits
- Авторлар: Gamkrelidze S.A.1, Trofimov A.A.1, Shchavruk N.V.1
-
Мекемелер:
- Institute of Ultra-High Frequency Semiconductor Electronics
- Шығарылым: Том 46, № 5 (2017)
- Беттер: 323-328
- Бөлім: Article
- URL: https://journals.rcsi.science/1063-7397/article/view/186504
- DOI: https://doi.org/10.1134/S1063739717050031
- ID: 186504
Дәйексөз келтіру
Аннотация
This paper is devoted to developing and optimizing the processing route that improves the effectiveness of diamond dicing of SiC device wafers with monolithic microwave integrated circuits (MMICs). The results of the experimental investigation of the diamond dicing effect on the MMIC parameters in the developed processing route are presented.
Авторлар туралы
S. Gamkrelidze
Institute of Ultra-High Frequency Semiconductor Electronics
Email: aa-trofimov@yandex.ru
Ресей, Moscow, 117105
A. Trofimov
Institute of Ultra-High Frequency Semiconductor Electronics
Хат алмасуға жауапты Автор.
Email: aa-trofimov@yandex.ru
Ресей, Moscow, 117105
N. Shchavruk
Institute of Ultra-High Frequency Semiconductor Electronics
Email: aa-trofimov@yandex.ru
Ресей, Moscow, 117105
Қосымша файлдар
