Physicochemical deposition features of peritectic alloys for high-density chipping of silicon crystals
- 作者: Roshchin V.1, Dshkhunyan V.2, Petukhov I.1, Sen’chenko K.1, Vagin M.1
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隶属关系:
- National Research University MIET
- OAO Rossiiskaya Elektronika
- 期: 卷 45, 编号 5 (2016)
- 页面: 324-328
- 栏目: Article
- URL: https://journals.rcsi.science/1063-7397/article/view/185735
- DOI: https://doi.org/10.1134/S1063739716040090
- ID: 185735
如何引用文章
详细
Physicochemical aspects of the electrochemical formation of vertical contact structures of the Sn–Ag peritectic composition for chipping integrated microcircuits by the inverted crystal method are considered. The layer-by-layer deposition of metals is investigated and the conditions of the vertical growth of the structures are determined.
作者简介
V. Roshchin
National Research University MIET
编辑信件的主要联系方式.
Email: OFH.MIET@yandex.ru
俄罗斯联邦, Moscow
V. Dshkhunyan
OAO Rossiiskaya Elektronika
Email: OFH.MIET@yandex.ru
俄罗斯联邦, Moscow
I. Petukhov
National Research University MIET
Email: OFH.MIET@yandex.ru
俄罗斯联邦, Moscow
K. Sen’chenko
National Research University MIET
Email: OFH.MIET@yandex.ru
俄罗斯联邦, Moscow
M. Vagin
National Research University MIET
Email: OFH.MIET@yandex.ru
俄罗斯联邦, Moscow