Physicochemical deposition features of peritectic alloys for high-density chipping of silicon crystals


如何引用文章

全文:

开放存取 开放存取
受限制的访问 ##reader.subscriptionAccessGranted##
受限制的访问 订阅存取

详细

Physicochemical aspects of the electrochemical formation of vertical contact structures of the Sn–Ag peritectic composition for chipping integrated microcircuits by the inverted crystal method are considered. The layer-by-layer deposition of metals is investigated and the conditions of the vertical growth of the structures are determined.

作者简介

V. Roshchin

National Research University MIET

编辑信件的主要联系方式.
Email: OFH.MIET@yandex.ru
俄罗斯联邦, Moscow

V. Dshkhunyan

OAO Rossiiskaya Elektronika

Email: OFH.MIET@yandex.ru
俄罗斯联邦, Moscow

I. Petukhov

National Research University MIET

Email: OFH.MIET@yandex.ru
俄罗斯联邦, Moscow

K. Sen’chenko

National Research University MIET

Email: OFH.MIET@yandex.ru
俄罗斯联邦, Moscow

M. Vagin

National Research University MIET

Email: OFH.MIET@yandex.ru
俄罗斯联邦, Moscow


版权所有 © Pleiades Publishing, Ltd., 2016
##common.cookie##