Specifics of electromagnetic radiation effects on integrated circuits
- Авторы: Skorobogatov P.1,2, Gerasimchuk O.3, Epifantsev K.1, Telets V.1
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Учреждения:
- National Research Nuclear University MEPhI
- Specialized Electronic Systems (SPELS)
- Impul’snaya tekhnika Research and Production Center
- Выпуск: Том 46, № 3 (2017)
- Страницы: 166-170
- Раздел: Article
- URL: https://journals.rcsi.science/1063-7397/article/view/186323
- DOI: https://doi.org/10.1134/S1063739717030088
- ID: 186323
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Аннотация
Modern regulations [1] stress the necessity of testing integrated circuits (ICs) in order to determine the real level of their resistance to single voltage pulses induced by electromagnetic radiation (EMR). With expansion of the EMR spectral composition, however, direct energy release can occur due to the absorption of the EMR field energy by the IC chip itself. To assess this possibility, the relationship is found between different mechanisms of the EMR-induced energy release for the typical irradiation geometry.
Об авторах
P. Skorobogatov
National Research Nuclear University MEPhI; Specialized Electronic Systems (SPELS)
Автор, ответственный за переписку.
Email: pkskor@spels.ru
Россия, Moscow, 115409; Moscow, 115409
O. Gerasimchuk
Impul’snaya tekhnika Research and Production Center
Email: pkskor@spels.ru
Россия, Moscow, 115304
K. Epifantsev
National Research Nuclear University MEPhI
Email: pkskor@spels.ru
Россия, Moscow, 115409
V. Telets
National Research Nuclear University MEPhI
Email: pkskor@spels.ru
Россия, Moscow, 115409