Specifics of electromagnetic radiation effects on integrated circuits
- Авторлар: Skorobogatov P.K.1,2, Gerasimchuk O.A.3, Epifantsev K.A.1, Telets V.A.1
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Мекемелер:
- National Research Nuclear University MEPhI
- Specialized Electronic Systems (SPELS)
- Impul’snaya tekhnika Research and Production Center
- Шығарылым: Том 46, № 3 (2017)
- Беттер: 166-170
- Бөлім: Article
- URL: https://journals.rcsi.science/1063-7397/article/view/186323
- DOI: https://doi.org/10.1134/S1063739717030088
- ID: 186323
Дәйексөз келтіру
Аннотация
Modern regulations [1] stress the necessity of testing integrated circuits (ICs) in order to determine the real level of their resistance to single voltage pulses induced by electromagnetic radiation (EMR). With expansion of the EMR spectral composition, however, direct energy release can occur due to the absorption of the EMR field energy by the IC chip itself. To assess this possibility, the relationship is found between different mechanisms of the EMR-induced energy release for the typical irradiation geometry.
Авторлар туралы
P. Skorobogatov
National Research Nuclear University MEPhI; Specialized Electronic Systems (SPELS)
Хат алмасуға жауапты Автор.
Email: pkskor@spels.ru
Ресей, Moscow, 115409; Moscow, 115409
O. Gerasimchuk
Impul’snaya tekhnika Research and Production Center
Email: pkskor@spels.ru
Ресей, Moscow, 115304
K. Epifantsev
National Research Nuclear University MEPhI
Email: pkskor@spels.ru
Ресей, Moscow, 115409
V. Telets
National Research Nuclear University MEPhI
Email: pkskor@spels.ru
Ресей, Moscow, 115409
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