Specifics of electromagnetic radiation effects on integrated circuits
- 作者: Skorobogatov P.K.1,2, Gerasimchuk O.A.3, Epifantsev K.A.1, Telets V.A.1
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隶属关系:
- National Research Nuclear University MEPhI
- Specialized Electronic Systems (SPELS)
- Impul’snaya tekhnika Research and Production Center
- 期: 卷 46, 编号 3 (2017)
- 页面: 166-170
- 栏目: Article
- URL: https://journals.rcsi.science/1063-7397/article/view/186323
- DOI: https://doi.org/10.1134/S1063739717030088
- ID: 186323
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详细
Modern regulations [1] stress the necessity of testing integrated circuits (ICs) in order to determine the real level of their resistance to single voltage pulses induced by electromagnetic radiation (EMR). With expansion of the EMR spectral composition, however, direct energy release can occur due to the absorption of the EMR field energy by the IC chip itself. To assess this possibility, the relationship is found between different mechanisms of the EMR-induced energy release for the typical irradiation geometry.
作者简介
P. Skorobogatov
National Research Nuclear University MEPhI; Specialized Electronic Systems (SPELS)
编辑信件的主要联系方式.
Email: pkskor@spels.ru
俄罗斯联邦, Moscow, 115409; Moscow, 115409
O. Gerasimchuk
Impul’snaya tekhnika Research and Production Center
Email: pkskor@spels.ru
俄罗斯联邦, Moscow, 115304
K. Epifantsev
National Research Nuclear University MEPhI
Email: pkskor@spels.ru
俄罗斯联邦, Moscow, 115409
V. Telets
National Research Nuclear University MEPhI
Email: pkskor@spels.ru
俄罗斯联邦, Moscow, 115409
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