Investigation of the properties and manufacturing features of nonvolatile FRAM memory based on atomic layer deposition

O. M. Orlov; A. M. Markeev; A. V. Zenkevich; A. G. Chernikova; M. V. Spiridonov; R. A. Izmaylov; E. S. Gornev

doi:10.1134/S1063739716040077

Investigation of the properties and manufacturing features of nonvolatile FRAM memory based on atomic layer deposition

Autores: Orlov O.M.¹^,2, Markeev A.M.³, Zenkevich A.V.³, Chernikova A.G.³, Spiridonov M.V.³, Izmaylov R.A.³^,2, Gornev E.S.¹^,2
Afiliações:
1. JSC Mikron
2. SC Molecular Electronics Research Institute
3. Moscow Institute of Physics and Technology
Edição: Volume 45, Nº 4 (2016)
Páginas: 262-269
Seção: Article
URL: https://journals.rcsi.science/1063-7397/article/view/185689
DOI: https://doi.org/10.1134/S1063739716040077
ID: 185689

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The structural and electrical properties of materials based on hafnium oxide grown by atomic layer deposition (ALD) are analyzed. The possibility and prospects of the use of their nanoscale films in nonvolatile memory are considered. The possibility of scaling Ferroelectric random access memory (FRAM) to subμm dimensions while preserving the ferroelectric properties is shown.