Investigation of the properties and manufacturing features of nonvolatile FRAM memory based on atomic layer deposition

O. M. Orlov; A. M. Markeev; A. V. Zenkevich; A. G. Chernikova; M. V. Spiridonov; R. A. Izmaylov; E. S. Gornev

doi:10.1134/S1063739716040077

Investigation of the properties and manufacturing features of nonvolatile FRAM memory based on atomic layer deposition

作者: Orlov O.¹^,2, Markeev A.³, Zenkevich A.³, Chernikova A.³, Spiridonov M.³, Izmaylov R.³^,2, Gornev E.¹^,2
隶属关系:
1. JSC Mikron
2. SC Molecular Electronics Research Institute
3. Moscow Institute of Physics and Technology
期: 卷 45, 编号 4 (2016)
页面: 262-269
栏目: Article
URL: https://journals.rcsi.science/1063-7397/article/view/185689
DOI: https://doi.org/10.1134/S1063739716040077
ID: 185689

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详细

The structural and electrical properties of materials based on hafnium oxide grown by atomic layer deposition (ALD) are analyzed. The possibility and prospects of the use of their nanoscale films in nonvolatile memory are considered. The possibility of scaling Ferroelectric random access memory (FRAM) to subμm dimensions while preserving the ferroelectric properties is shown.