Investigating the Dynamic Characteristics of High-Temperature SOI CMOS VLSIC Elements
- Autores: Benediktov A.1, Shelepin N.1, Ignatov P.1, Mikhailov A.1, Potupchik A.1
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Afiliações:
- Molecular Electronics Research Institute (MERI)
- Edição: Volume 47, Nº 3 (2018)
- Páginas: 197-200
- Seção: Article
- URL: https://journals.rcsi.science/1063-7397/article/view/186831
- DOI: https://doi.org/10.1134/S1063739718030022
- ID: 186831
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Resumo
The static and dynamic characteristics of SOI CMOS inverters are investigated in the temperature range from–60 to 250°С. The experimental dependences of the dynamic and static currents, as well as the delay of the logic gate (inverter), on temperature are obtained. Based on these characteristics, the operability of SOI CMOS logic gates at high temperatures is estimated.
Sobre autores
A. Benediktov
Molecular Electronics Research Institute (MERI)
Autor responsável pela correspondência
Email: asb_sm@mail.ru
Rússia, Zelenograd, Moscow, 124460
N. Shelepin
Molecular Electronics Research Institute (MERI)
Email: asb_sm@mail.ru
Rússia, Zelenograd, Moscow, 124460
P. Ignatov
Molecular Electronics Research Institute (MERI)
Email: asb_sm@mail.ru
Rússia, Zelenograd, Moscow, 124460
A. Mikhailov
Molecular Electronics Research Institute (MERI)
Email: asb_sm@mail.ru
Rússia, Zelenograd, Moscow, 124460
A. Potupchik
Molecular Electronics Research Institute (MERI)
Email: asb_sm@mail.ru
Rússia, Zelenograd, Moscow, 124460