Investigating the Dynamic Characteristics of High-Temperature SOI CMOS VLSIC Elements

A. S. Benediktov; N. A. Shelepin; P. V. Ignatov; A. A. Mikhailov; A. G. Potupchik

doi:10.1134/S1063739718030022

Investigating the Dynamic Characteristics of High-Temperature SOI CMOS VLSIC Elements

作者: Benediktov A.S.¹, Shelepin N.A.¹, Ignatov P.V.¹, Mikhailov A.A.¹, Potupchik A.G.¹
隶属关系:
1. Molecular Electronics Research Institute (MERI)
期: 卷 47, 编号 3 (2018)
页面: 197-200
栏目: Article
URL: https://journals.rcsi.science/1063-7397/article/view/186831
DOI: https://doi.org/10.1134/S1063739718030022
ID: 186831

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详细

The static and dynamic characteristics of SOI CMOS inverters are investigated in the temperature range from–60 to 250°С. The experimental dependences of the dynamic and static currents, as well as the delay of the logic gate (inverter), on temperature are obtained. Based on these characteristics, the operability of SOI CMOS logic gates at high temperatures is estimated.