Enviar artigo por via de e-mail Effect of Ar and He additives on the kinetics of GaAs etching in CF2Cl2 plasma
- Autores: Pivovarenok S.1
-
Afiliações:
- Ivanovo State University of Chemistry and Technology
- Edição: Volume 46, Nº 3 (2017)
- Páginas: 211-215
- Seção: Article
- URL: https://journals.rcsi.science/1063-7397/article/view/186382
- DOI: https://doi.org/10.1134/S106373971702007X
- ID: 186382
Citar
Acesso aberto
Acesso está concedido
Somente assinantes
Resumo
The effect of argon and helium additives on the kinetics of GaAs etching in high-frequency (HF) CF2Cl2 plasma has been analyzed. It is shown that dilution of the CF2Cl2 with argon or helium at a 1: 1 ratio insignificantly decreases the etching rate. An application of the bias power onto a substrate holder leads to
Sobre autores
S. Pivovarenok
Ivanovo State University of Chemistry and Technology
Autor responsável pela correspondência
Email: sap@isuct.ru
Rússia, Ivanovo, 153000
