Effect of Ar and He additives on the kinetics of GaAs etching in CF2Cl2 plasma

Аннотация

The effect of argon and helium additives on the kinetics of GaAs etching in high-frequency (HF) CF₂Cl₂ plasma has been analyzed. It is shown that dilution of the CF₂Cl₂ with argon or helium at a 1: 1 ratio insignificantly decreases the etching rate. An application of the bias power onto a substrate holder leads to