Effect of Ar and He additives on the kinetics of GaAs etching in CF2Cl2 plasma
- Авторлар: Pivovarenok S.1
-
Мекемелер:
- Ivanovo State University of Chemistry and Technology
- Шығарылым: Том 46, № 3 (2017)
- Беттер: 211-215
- Бөлім: Article
- URL: https://journals.rcsi.science/1063-7397/article/view/186382
- DOI: https://doi.org/10.1134/S106373971702007X
- ID: 186382
Дәйексөз келтіру
Аннотация
The effect of argon and helium additives on the kinetics of GaAs etching in high-frequency (HF) CF2Cl2 plasma has been analyzed. It is shown that dilution of the CF2Cl2 with argon or helium at a 1: 1 ratio insignificantly decreases the etching rate. An application of the bias power onto a substrate holder leads to
Авторлар туралы
S. Pivovarenok
Ivanovo State University of Chemistry and Technology
Хат алмасуға жауапты Автор.
Email: sap@isuct.ru
Ресей, Ivanovo, 153000