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Vol 48, No 4 (2019)
Inter-Device Radiation-Induced Leakages in the Bulk 180-nm CMOS Technology
Boruzdina A.B., Gerasimov Y.M., Grigor’ev N.G., Kobylyatskii A.V., Ulanova A.V., Shvetsov-Shilovskii I.I.
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(Eng)
Vol 45, No 7 (2016)
TCAD leakage current analysis of a 45 nm MOSFET structure with a high-k dielectric
Petrosyants K.O., Popov D.A., Sambursky L.M., Kharitonov I.A.
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(Eng)
Vol 45, No 1 (2016)
Influence of the annealing temperature on the ferroelectric properties of niobium-doped strontium–bismuth tantalate
Golosov D.A., Zavadski S.M., Kolos V.V., Turtsevich A.S., Okodzhi D.E.
PDF
(Eng)
Vol 48, No 8 (2019)
The Effect of Technological Factors on the Characteristics of Ohmic Contacts of the Power AlGaN/GaN/SiC-HEMT
Enisherlova K.L., Medvedev B.K., Temper E.M., Korneev V.I.
PDF
(Eng)
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