Vol 45, No 5 (2016)
- Year: 2016
- Articles: 8
- URL: https://journals.rcsi.science/1063-7397/issue/view/11613
Article
Experimental diamond photonics: Current state and prospects. Part I
Abstract
In this review, we generalize and systematize the experimental data of the past few years concerning the implementation of solid-state photonic structures based on synthetic diamond materials. We list the physical properties and performances of the available devices and describe the technologies for their fabrication. The aim of the review is to establish whether the quality of the available quantum network elements, including various waveguide structures and microcavities interacting with the color centers, meets the concept of a solid-state photonic chip.
Schmidt decomposition and analysis of statistical correlations
Abstract
The new correlation data analysis method based on the complements of classical probability distribution to quantum state and Schmidt decomposition is presented. It is shown that mathematical methods of quantum mechanics allow us to develop new effective tools for the analysis of statistical dependences and relationships. The presented formalism is the natural approach for the analysis of both classical and quantum correlations. Algorithms of the calculation of partial and multiple correlation coefficients using Schmidt numbers were studied. Numerical estimates of these correlation coefficients were calculated for different probability distributions and quantum states.
Physicochemical deposition features of peritectic alloys for high-density chipping of silicon crystals
Abstract
Physicochemical aspects of the electrochemical formation of vertical contact structures of the Sn–Ag peritectic composition for chipping integrated microcircuits by the inverted crystal method are considered. The layer-by-layer deposition of metals is investigated and the conditions of the vertical growth of the structures are determined.
Study of plasma radiation spectra of (HCl + Ar, H2, and Cl2) mixtures in GaAs etching
Abstract
In order to form a topology on a semiconductor surface, a halogen-containing plasma is often used; therefore, the spectral control of the etching process is a topical technology in the modern electronics. In this work we have studied the radiation spectra of plasma-forming gases consisting of mixtures of hydrogen chloride with argon, chlorine, and hydrogen in the presence of a semiconductor plate of gallium arsenide. The lines and bands have been chosen for the spectral control of the rate of the etching process by the radiation intensity of the lines and bands of the etching products. It is shown that a connection between the radiation intensity of the products of GaAs etching and the rate of etching in the plasma of the mixtures of hydrogen chloride with argon and chlorine is described by a directly proportional dependence, which indicates the possibility of real-time control of the etching process by the spectral method.
Thin-film positive electrode based on vanadium oxides for lithium-ion accumulators
Abstract
The results of the experiments on the development of positive thin-film electrodes for lithium-ion accumulators based on vanadium oxides are presented. The deposition modes and controlling methods of the structure and phase composition of the films, diagnostics methods of the structure and phase composition, and the results of the electrochemical tests of the positive electrodes are described.
Kinetics of the interaction between a CCl2F2 radio-frequency discharge and gallium arsenide
Abstract
Halogen-containing plasma, particularly, freons, is often used to form topologies on the surface of semiconductors. This paper investigates the kinetics of the interaction between the R-12 freon and the surface of a semiconductor structure. The R-12 freon is effective for etching semiconductors, particularly, gallium arsenide, as it provides sufficient rates of interaction while preserving a uniform and clean surface. In this work, the surface of the samples is inspected with a Solver P47Pro atomic-force microscope.
Charge transport in thin layers of ferroelectric Hf0.5Zr0.5O2
Abstract
The mechanism responsible for the charge transport in thin ferroelectric Hf0.5Zr0.5O2 films has been studied. It is shown that in these films the transport mechanism is phonon-assisted tunneling between the traps. The optimal thickness of dielectric film for TiN/Hf0.5Zr0.5O2/Pt structures is determined. As a result of comparing the experimental current–voltage (I–V) characteristics of TiN/Hf0.5Zr0.5O2/Pt structures with the calculated ones, the thermal and optical energies of the traps are determined and the concentration of the traps is estimated. A comparison between the transport properties of ferroelectric and amorphous Hf0.5Zr0.5O2 films is carried out. It is shown that the charge transport mechanism in this dielectric does not depend on its crystalline phase. A method for decreasing leakage currents in Hf0.5Zr0.5O2 is proposed. A study of the resource of repolarization cycles for TiN/Hf0.5Zr0.5O2/TiN metal-dielectric-metal (MDM) structures fully grown by atomic layer deposition (ALD) has been carried out.
Effect of the reflection coefficients on the conductivity of a thin metal layer in the case of an inhomogeneous time-periodic electric field
Abstract
In the case of an inhomogeneous time-periodic electric field E, the electrical current distribution is evaluated for a thin metal layer with different reflection coefficients q1 and q2 of its surfaces. The dependence of the conductive function Σ on the frequency of the external inhomogeneous time-periodic electric field and on the coefficient of the inhomogeneous field κ is analyzed. The relaxation time approximation to the kinetic Boltzmann equation for electron transport is used.