Enviar artigo por via de e-mail Microconsuming 8–12 GHz GaN Power Amplifiers
- Autores: Gamkrelidze S.1, Gnatyuk D.1, Zuev A.1, Maitama M.1, Mal’tsev P.1, Mikhalev A.1, Fedorov Y.1
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Afiliações:
- Institute of Ultra-High Frequency Semiconductor Electronics, Russian Academy of Sciences
- Edição: Volume 48, Nº 4 (2019)
- Páginas: 262-267
- Seção: Article
- URL: https://journals.rcsi.science/1063-7397/article/view/187159
- DOI: https://doi.org/10.1134/S106373971904005X
- ID: 187159
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Resumo
This paper describes a cascade circuit of a gallium nitride (GaN) power amplifier whose chip area is smaller by factors of 4 to 6 than that of traditional amplifiers on silicon carbide (SiC) substrates. It enables an output power of up to 3 W at 8–12 GHz for microconsuming power amplifiers in robotics and spacecraft applications.
Sobre autores
S. Gamkrelidze
Institute of Ultra-High Frequency Semiconductor Electronics, Russian Academy of Sciences
Autor responsável pela correspondência
Email: Iuhfseras2010@yandex.ru
Rússia, Moscow, 117105
D. Gnatyuk
Institute of Ultra-High Frequency Semiconductor Electronics, Russian Academy of Sciences
Email: m2lkeny@yandex.ru
Rússia, Moscow, 117105
A. Zuev
Institute of Ultra-High Frequency Semiconductor Electronics, Russian Academy of Sciences
Email: m2lkeny@yandex.ru
Rússia, Moscow, 117105
M. Maitama
Institute of Ultra-High Frequency Semiconductor Electronics, Russian Academy of Sciences
Email: m2lkeny@yandex.ru
Rússia, Moscow, 117105
P. Mal’tsev
Institute of Ultra-High Frequency Semiconductor Electronics, Russian Academy of Sciences
Email: m2lkeny@yandex.ru
Rússia, Moscow, 117105
A. Mikhalev
Institute of Ultra-High Frequency Semiconductor Electronics, Russian Academy of Sciences
Autor responsável pela correspondência
Email: m2lkeny@yandex.ru
Rússia, Moscow, 117105
Yu. Fedorov
Institute of Ultra-High Frequency Semiconductor Electronics, Russian Academy of Sciences
Email: m2lkeny@yandex.ru
Rússia, Moscow, 117105
