Microconsuming 8–12 GHz GaN Power Amplifiers

Аннотация

This paper describes a cascade circuit of a gallium nitride (GaN) power amplifier whose chip area is smaller by factors of 4 to 6 than that of traditional amplifiers on silicon carbide (SiC) substrates. It enables an output power of up to 3 W at 8–12 GHz for microconsuming power amplifiers in robotics and spacecraft applications.