Мақаланы E-mail арқылы жіберу Microconsuming 8–12 GHz GaN Power Amplifiers
- Авторлар: Gamkrelidze S.1, Gnatyuk D.1, Zuev A.1, Maitama M.1, Mal’tsev P.1, Mikhalev A.1, Fedorov Y.1
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Мекемелер:
- Institute of Ultra-High Frequency Semiconductor Electronics, Russian Academy of Sciences
- Шығарылым: Том 48, № 4 (2019)
- Беттер: 262-267
- Бөлім: Article
- URL: https://journals.rcsi.science/1063-7397/article/view/187159
- DOI: https://doi.org/10.1134/S106373971904005X
- ID: 187159
Дәйексөз келтіру
Ашық рұқсат
Рұқсат берілді
Тек жазылушылар үшін
Аннотация
This paper describes a cascade circuit of a gallium nitride (GaN) power amplifier whose chip area is smaller by factors of 4 to 6 than that of traditional amplifiers on silicon carbide (SiC) substrates. It enables an output power of up to 3 W at 8–12 GHz for microconsuming power amplifiers in robotics and spacecraft applications.
Авторлар туралы
S. Gamkrelidze
Institute of Ultra-High Frequency Semiconductor Electronics, Russian Academy of Sciences
Хат алмасуға жауапты Автор.
Email: Iuhfseras2010@yandex.ru
Ресей, Moscow, 117105
D. Gnatyuk
Institute of Ultra-High Frequency Semiconductor Electronics, Russian Academy of Sciences
Email: m2lkeny@yandex.ru
Ресей, Moscow, 117105
A. Zuev
Institute of Ultra-High Frequency Semiconductor Electronics, Russian Academy of Sciences
Email: m2lkeny@yandex.ru
Ресей, Moscow, 117105
M. Maitama
Institute of Ultra-High Frequency Semiconductor Electronics, Russian Academy of Sciences
Email: m2lkeny@yandex.ru
Ресей, Moscow, 117105
P. Mal’tsev
Institute of Ultra-High Frequency Semiconductor Electronics, Russian Academy of Sciences
Email: m2lkeny@yandex.ru
Ресей, Moscow, 117105
A. Mikhalev
Institute of Ultra-High Frequency Semiconductor Electronics, Russian Academy of Sciences
Хат алмасуға жауапты Автор.
Email: m2lkeny@yandex.ru
Ресей, Moscow, 117105
Yu. Fedorov
Institute of Ultra-High Frequency Semiconductor Electronics, Russian Academy of Sciences
Email: m2lkeny@yandex.ru
Ресей, Moscow, 117105
